Fig. 1: Defect geometries and calculated electronic structures of (a,d) NCVC−1 in diamond, (b, e) CBVN in hBN, and (c,f) WSe in MoSe2. | Nature Communications

Fig. 1: Defect geometries and calculated electronic structures of (a,d) NCVC−1 in diamond, (b, e) CBVN in hBN, and (c,f) WSe in MoSe2.

From: Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

Fig. 1

a–c Top (top) and side (bottom) views of defect geometries and spin densities of the defect qubits in the ground state (isosurface level = 0.003 Å−3). d–f Energy levels of the defect qubits. The green arrows indicate spin-conserving intradefect optical transition. Detailed physical quantities of possible combinations of MX defects and MX2 hosts are summarized in Table 1.

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