Fig. 4: An embedded microgrid stabilizes CsPbI3 perovskite photodetectors.
From: An embedded interfacial network stabilizes inorganic CsPbI3 perovskite thin films
a Schematic illustration of device architecture with a scanning electron microscopy (SEM) image of the active perovskite layer with an embedded 40 μm microgrid. This inverted p-i-n type device architecture was chosen with indium tin oxide(ITO)/NiOx acting as the anode and the phenyl-C 61-butyric acid methyl ester/bathocuproine (PCBM/BCP) layers acting as the cathode. b photograph (after first 24 h of ambient storage; scale bar represents 3 mm) of unencapsulated CsPbI3 photodetector devices stabilized by integrating a microgrid into a selected portion of the photo-active perovskite layer. c Tracking of effective quantum efficiency (EQE) spectra over 7 days for devices fabricated with and without the microgrid. d Figures of merit (operating at 690 nm and −0.5 V): EQE, responsivity (R) and specific detectivity (D*) of devices operating in an ambient environment (45–50% RH) for one week.
