Fig. 4: Detailed electrical transports for NbSb₂ single crystal.

a Nernst thermopower (S_yx) of single-crystalline NbSb₂ as a function of magnetic field B at 25 K. The data for PtSn₄²², Cd₃As₂⁵⁰, Mg₂Pb²⁶, NbP¹⁹, TaP²⁰, and WTe₂²⁷ are included for comparison. b Fitting of the transverse resistivity ρ_xx(B) and c Hall resistivity ρ_yx(B) of single-crystalline NbSb₂ under different temperatures. The symbols are experimental data and the lines are the fitting curves. In electrical transport measurements, the current I is parallel to the [010] direction and the magnetic field B is perpendicular to the (200) plane. d Carrier concentrations (n_e and n_h) and carrier mobilities (μ_e and μ_h) of single-crystalline NbSb₂. e Temperature dependence of the difference between Seebeck thermopower of electrons and holes (\({S}_{{xx}}^{{{{{{\rm{h}}}}}}}-{S}_{{xx}}^{{{{{{\rm{e}}}}}}}\)) of single-crystalline NbSb₂ under different magnetic fields. f Seebeck thermopower of electrons and holes related to the charge carrier diffusion processes (\({S}_{{{{{{\rm{d}}}}}}}^{{{{{{\rm{e}}}}}}}\) and \({S}_{{{{{{\rm{d}}}}}}}^{{{{{{\rm{h}}}}}}}\)) and phonons (\({S}_{{{{{{\rm{p}}}}}}}^{{{{{{\rm{e}}}}}}}\) and \({S}_{{{{{{\rm{p}}}}}}}^{{{{{{\rm{h}}}}}}}\)) at 5 T, respectively.