Fig. 2: Dynamic transport properties of dual-gate FET devices.
From: Sliding induced multiple polarization states in two-dimensional ferroelectrics
a Schematic of a typical 3 R MoS2 dual-gate device. b Micrograph image of a bilayer device. The scale bar is 10 μm. c Drain current (Id) as a function of top gate and bottom gate voltages in bilayer 3 R MoS2. The inset is the plot of Id against Vd in bilayer 3 R MoS2 without gating voltage. d Drain current (Id) as a function of vertical electric field (E⊥) in bilayer 2H MoS2 and 3 R MoS2 of different layer numbers in a loop of sweep measurement. Upward is defined as the positive electric field direction. Drain current (Id) as a function of vertical electric field (E⊥) and doping bias (Bias) in e forward sweep and f backward sweep for bilayer device. For better illustration, normalized strength of drain current is plotted as a function of vertical electric field (E⊥) and doping bias (Bias) in g forward sweep and h backward sweep for bilayer device. The dashed lines mark the polarization flipping points. The drain current is normalized to the drain current value at the start point of each sweep.
