Fig. 5: 100 nm TiO2 ALD deposited in holes with and without TMPMCT inhibitor. | Nature Communications

Fig. 5: 100 nm TiO2 ALD deposited in holes with and without TMPMCT inhibitor.

From: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Fig. 5

a Cross-sectional TEM images of the hole pattern (depth = 1600 nm) for 100 nm TiO2 ALD without TMPMCT. Unfilled zones are observed at the bottom (zone 4), and seam formation occurs along the centreline of the hole (zones 2 and 3). b Cross-sectional TEM images of the 100 nm TiO2 ALD/60 s TMPMCT/SiO2 hole and top-down TEM images at different depths, demonstrating hole filling without any seam formation.

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