Fig. 2: Microcavity electroreflectance at low SQ concentration.

Reflectivity and EA data for devices with a 5 wt% SQ:NPB active layer. a Angle-dependent s-polarized reflectivity spectra measured for a half-cavity control device (illustrated in the inset) together with corresponding transfer matrix simulations (red dashed lines) based on the 5 wt% SQ:NPB optical constant dispersion in Fig. 1. b Measured and c simulated electroreflectance spectra for the control device at different angles. The simulation is carried out via the transfer matrix model by red-shifting and strengthening the Lorentz oscillators used to model the SQ optical constant dispersion as described in the main text. d Measured (solid lines) and simulated (dashed lines) s-polarized reflectivity spectra for a negatively-detuned (\(\Delta=-100\) meV) 5 wt% SQ:NPB microcavity in the strong coupling regime. The green dashed line indicates the energy of the bare exciton transition. Panels e and f respectively show measured and simulated electroreflectance spectra for this cavity using the same electric field-perturbed optical constant dispersion as for the half-cavity device in panel c. g–i Analogous results obtained for a positively-detuned (\(\Delta=170\) meV) microcavity.