Fig. 3: Excitation energy dependence of quantum interference.
From: Quantum interference between dark-excitons and zone-edged acoustic phonons in few-layer WS2
a, b Raman spectra of 2L- and 3L WS2 under different excitation energies (EL) at 4 K, respectively. The intensities are normalized to the Raman modes of silicon substrate (524 cm−1 at 4 K). The data are offset for clarity. c The intensity of shear and LA(M) modes respect to the excitation energies. The dotted gray line is the reflection spectrum of 2L-WS2.
