Fig. 4: Highest output power and conversion efficiency OPOs.
From: High-performance Kerr microresonator optical parametric oscillator on a silicon chip
a Spectrum of the greatest output power OPO, which was achieved with a 200 nm gap and has Pi beyond 20 mW, albeit at a conversion efficiency of ηi ≈ 0.14. At high output powers, this device continues to show isolated OPO. The loaded Qs for the idler, pump, and signal are 6.1 × 104, 2 × 105, and 1.2 × 106, respectively, for the 200 nm coupling gap. b Spectrum of the greatest conversion efficiency OPO, which was achieved with a 300 nm gap and has ηi approaching 30%, at the expense of additional parametric sidebands. The loaded Qs for the idler, pump, and signal are 3 × 105, 1.6 × 106, and 4 × 106, respectively, for the 300 nm coupling gap. In the idler band, the additional sidebands are > 40 dB below the idler, while in the signal band, the additional sidebands are > 14 dB below the signal.
