Fig. 2: Electrical transport measurements of MoS2 FETs with 1D semimetal contacts.
From: One-dimensional semimetal contacts to two-dimensional semiconductors
a Room-temperature transfer characteristics of a 4L-MoS2 FET with SWCNT (red) and Ti (green) contacts on 300 nm SiO2 dielectrics. The Ids and Vg are conduction current in channel and gate voltage respectively. b Output characteristics of the MoS2 FET with SWCNT contacts. The Vd is drain bias voltage. c Output characteristics of the MoS2 FET with Ti contacts. d Temperature-dependent transfer characteristics of the MoS2 FET with SWCNT (red) and Ti (green) contacts. e Arrhenius plots of the CNT-contacted four-layer MoS2. The q, k and T are elementary charge, Boltzmann constant and temperature respectively. f Gate-dependent barrier height of the CNT/MoS2 (red) and Ti/MoS2 (green) interfaces. g Comparison band diagram for 2D FETs with 1D semimetal contact and conventional metal contact. The orange dashed lines represent the Fermi levels. The barrier height at semimetal-semiconductor interface is gate-tunable due to the gate-dependent work function of semimetal, while the one at metal-semiconductor interface is nearly fixed.
