Fig. 4: General semimetal CNT contacts.
From: One-dimensional semimetal contacts to two-dimensional semiconductors
a Calculated gating efficiency (dµCNT/dVg) of armchair CNTs using 20 nm-thick h-BN dielectric. Inset shows the optical image of the as-fabricated device and the band offset between different materials. The white vertical dashed lines represent two CNT electrodes. Scale bar: 5 μm. The two horizonal dashed lines represent the gate-tunable work function of CNT. b Room-temperature transfer characteristics of local bottom-gate FETs with MoS2, WS2, and WSe2 channels. Output characteristics of MoS2 (c), WS2 (d), and WSe2 (e) FETs, showing Vg-dependent I–V relationship and on-state current of several microampere. The arrows with gradient color indicate the direction of Vg sweeping. The Vg step is 1 V.
