Fig. 3: APDs performance comparison of the nBn unipolar barrier heterostructure and the n–n isotype heterostructure. | Nature Communications

Fig. 3: APDs performance comparison of the nBn unipolar barrier heterostructure and the n–n isotype heterostructure.

From: Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Fig. 3

a Schematic device illustration of the Ga2O3/MgO/Nb:STO nBn unipolar barrier APD, and the Ga2O3/Nb:STO n–n isotype APD. b Current–voltage (I–V) characteristics of both devices. c Reverse I–V curves in dark and under UV illumination for both devices; the right axis illustrates the gain. d Detectivity and LDR as a function of reverse bias for both devices.

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