Fig. 2: Anomalous Hall effect of USbTe and the scaling analysis.
From: Breakdown of the scaling relation of anomalous Hall effect in Kondo lattice ferromagnet USbTe
a Magnetic field dependence of the anomalous Hall resistivity \({\rho }_{xy}^{a}\) of USbTe single crystal at three different temperatures, showing a clear sign change of AHE upon cooling, well below Tc of 125 K. Magnetic field is applied along c axis and electric current is along a axis. b Temperature dependence of anomalous Hall resistivity \({\rho }_{xy}^{a}\) in zero magnetic fields. c Carrier density extrapolated from the slope of the Hall resistivity as a function of temperature. Carriers remain to be electrons for the whole temperature range. d\(\,{\sigma }_{xy}^{a}\) as a function of \({\sigma }_{xx}^{2}\), showing that \({\sigma }_{xy}^{a}\) is independent of \({\sigma }_{xx}^{2}\) below 6 K. e\(\,{\rho }_{xy}^{a}M\)(0K)/(Mρxx) as a function of ρxx. The slope of the plot represents the intrinsic Berry curvature contribution to the AHE while the intercept represents the extrinsic skew scattering contribution to the AHE. f Estimated contributions to AHE from Berry curvature and skew scattering. In the temperature range of 2–6 and 70–100 K (solid symbols), the separation of intrinsic Berry curvature and extrinsic skew scattering contribution is based on established scaling relation with no additional assumptions. In the temperature range of 6–70 K (circle symbols), the exact temperature dependence of each part is not known and is estimated using the assumption discussed in the main text for simplicity.
