Fig. 1: Phase transition behavior and energy-storage performance of NaNbO3-based antiferroelectrics and relaxors.
From: Tailoring high-energy storage NaNbO3-based materials from antiferroelectric to relaxor states

Polarization hysteresis loops of a NN, b NN5SS, c Mn-modified NN5SS (NN5SS_0.1Mn and NN5SS_1.0Mn), d NN7SS_1.0Mn, and e NN9SS_1.0Mn samples, obtained from the 2nd electric field cycle at 1 Hz. f Recoverable energy-storage density and efficiency properties of the investigated materials. g Frequency-dependent loss tangent and h Nyquist-plot of the NN, NN5SS, NN5SS_0.1Mn, and NN5SS_1.0Mn samples. i Concentrations of sodium vacancies (\({V}_{{{{{{\rm{Na}}}}}}}^{{\prime} }\)), oxygen vacancies (\({V}_{{{{{{\rm{O}}}}}}}^{\bullet \bullet }\) and \({V}_{{{{{{\rm{O}}}}}}}^{\bullet }\)), holes (nh), and electrons (ne) as a function of oxygen partial pressure, calculated at a temperature of 1360 °C.