Fig. 2: Dielectric properties and TEM characterization of antiferroelectrics and relaxors.
From: Tailoring high-energy storage NaNbO3-based materials from antiferroelectric to relaxor states
Temperature-dependent dielectric permittivity of the a NN5SS_1.0Mn, b NN7SS_1.0Mn, and c NN9SS_1.0Mn samples, measured at a frequency of 1 kHz, 10 kHz, 100 kHz, and 1 MHz. The inset in (c) demonstrates the fitting of the frequency dispersion of the NN9SS_1.0Mn sample using the Vogel–Fulcher law. Domain morphology, obtained by the circled superlattice reflections of Fig. 3a–c in (d) bright-field (BF) and (e, f) corresponding centered dark-field (CDF) modes. g–i Inverse fast Fourier transform (IFFT) images of the HRTEM images of NN5SS_1.0Mn, NN7SS_1.0Mn, and NN9SS_1.0Mn, respectively. The original HRETM images can be found in Supplementary Fig. 8. The IFFT in (g) is obtained by masking the ¼(100) superlattice reflections, where regular lattice planes and the APB are highlighted with a modulation length of 1.56 nm and 2.34 nm, respectively. The IFFT images in (h) and (i) are a superposition of three IFFT images, obtained by masking the ½\((10\bar{1})\), ½\((001)\) and ½\((100)\) superlattice reflections, corresponding to the pink, green and yellow regions, respectively.
