Fig. 1: Pressure-induced resistance drop and Hall coefficient measurement of β′-In2Se3.
From: Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
a Pressure-dependent resistivity at room temperature. The piezoresistive gauge πp is estimated from the exponential fit to the data (dashed line) which is a straight line on the semilog plot. b Dynamic piezoresistance measurement. c Temperature-dependent resistance for pressures of 0 ~ 2.0 GPa. d Hall coefficient and carrier concentration as a function of pressure measured at room temperature.
