Fig. 2: High-field transport in regular graphene bands.
a Pulsed current-voltage characteristic (plotted as J vs. average source-drain electric field) of GhBN1, measured at 300 K. The various curves correspond to different values of Vg, which is incremented in 1-V steps from the Dirac point (Vg ~ –3 V) to +10 V. Data obtained at the Dirac point are denoted by the larger black circles. The lower-right inset is a false-color optical image of GhBN1, showing the integration of the h-BN/graphene/h-BN device into a coplanar waveguide that is 50-Ω matched for the transient measurements. The white dotted lines in this figure indicate how the contact metallization to the graphene extends to the edges of the top gate (see the “Methods” section for details). b Resistance contour constructed from the data of (a) (see supplement for details). The resistance is defined as the steady-state transient voltage applied to the heterostructure, divided by the corresponding current (see supplement for details). The inset represents the variation of the Dirac-point gate voltage (VD) as a function of the (transient) source–drain electric field. The error bars denote the experimental accuracy with which VD can be identified from the data. c Variation of resistance as a function of the electric field, extracted from the contour of (b). Colors shown correspond to those of (a). Note the double-log axes of the figure.
