Fig. 1: Sample geometry, diagonal resistance RD versus gate voltage Vg, and RD and Hall resistance RXY versus magnetic field.
From: Anomalous quantized plateaus in two-dimensional electron gas with gate confinement
a The Hall bar devices are 150 μm wide and metal split gates define regions of L = 1 μm and W = 2 μm. \({R}_{{{{{{\rm{D}}}}}}}\) measures diagonal resistance across the confined region while \({R}_{{{{{{\rm{XY}}}}}}}\) measures the Hall resistance of the open region. b \({R}_{{{{{{\rm{D}}}}}}}\) as a function of \({V}_{{{{{{\rm{g}}}}}}}\) at \(T=6{{{{{\rm{K}}}}}}\) and zero magnetic field. Electrons are depleted at \({V}_{{{{{{\rm{g}}}}}}}\approx -1.3{{{{{\rm{V}}}}}}\), which is shown as a step-like increase in the plot. c \({R}_{{{{{{\rm{XY}}}}}}}\) and \({R}_{{{{{{\rm{D}}}}}}}\) as a function of the magnetic field at refrigerator temperature \(T=13{{{{{\rm{mK}}}}}}\) (in the unit of \({R}_{{{{{{\rm{K}}}}}}}=h/{e}^{2}\)). Several FQH and IQH states are developed (labeled in the figure) in \(1 \, < \, \nu \, < \, 2\). The red trace (\(\Delta V=0\)) follows the black trace in IQH and FQH states, while the blue trace (\(\Delta V=3.1{{{{{\rm{V}}}}}}\)) shows prominent rising and some unexpected plateaus. Source data are provided as a Source Data file.
