Fig. 1: Unconventional insulating phase in neutral bilayer graphene atop few-layered CrOCl.
From: Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene
a Color map of a dual gate scan of channel resistance in a typical sample, measured using DC Ohm meter at T = 1.5 K and B = 0 T. b Line profile of longitudinal resistance Rxx at D = 0.4 V/nm, along the dashed line in a in the range of − 0.8 × 1013 cm−2 < ntot < 1.5 × 1013 cm−2, here ntot = (CtgVtg + CbgVbg)/e − n0, where Ctg and Cbg are the top and bottom gate capacitances per area, Vtg and Vbg are the top and bottom gate voltage, and n0 is residual doping. A contact resistance of about 5800 Ω is subtracted. Inset shows a high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of the cross-section of a typical sample (Device-S1), and the scale bar is 2 nm. c Differential conductance dI/dV as a function of bias voltage, measured at the black starred point in a at different temperatures. d dI/dV as a function of temperature along fixed bias voltages as indicated in dashed lines in c.
