Fig. 2: Nonvolatile electric-field control of the 2D gas properties.

a Sheet resistance R_s as a function of the applied gate-electric field E_g across the sample, showing high and low-resistivity states of the device with R_s contrast of 1064%. The gate electric-field sequence is [+4, − 4, +4] kV cm⁻¹ ([+200 V, −200V, + 200 V]), with the low-resistance state as the initial state. b Temperature dependence of the R_s contrast. c Endurance property of R_s at remanence (E_g = 0 kV cm⁻¹) after application of positive and negative gate electric-field pulses of ±4 kV cm⁻¹. All data have been measured at 10 K with a 2D current density of j = 0.1 A cm⁻¹ (I₀ = 1 µA), and after initialization of the ferromagnet in the up magnetization state.