Fig. 3: Demonstration of ionic-junction logic gates based on multiple fiber-shaped ionic diodes.

a Device architecture and circuit diagram of a fiber-shaped IBJT connected in a common-emitter configuration. V_B, the voltage of collector; V_C, the voltage of collector; I_B, the current of base; I_C, the current of collector. b Output characteristic (I_C-V_C) curves as a function of input current (I_B). c Input characteristic (I_C-V_C) curves as a function of input voltage (V_B). d Schematic and truth table of an “AND” gate fabricated by two fiber-shaped ionic diodes. The square wave voltages (V_A and V_B) were input through the core layer (CNT fiber) of two parallel fiber-shaped ionic diodes. The resistors R₁ and R₂ are 10 and 100 MΩ, respectively. V_A, the voltage applied at terminal A; V_B, the voltage applied at terminal B; V_CC, power supply. e Experimental data of the input and output signals of the “AND” gate. f Schematic and truth table of an “OR” gate fabricated by two fiber-shaped ionic diodes, in which the square wave voltages (V_A and V_B) were input through the sheath layer (CNT coating), where R₁ is 100 MΩ. g Experimental data of the input and output signals of the “OR” logic gate. Source data are provided as a Source Data file.