Fig. 1: Lateral heterostructures.
From: Interface engineering of charge-transfer excitons in 2D lateral heterostructures
a Two TMD monolayers (e.g. MoSe2 and WSe2) are stitched laterally. b They have intrinsic bandgaps \({E}_{{{{{{{{\rm{Mo}}}}}}}}}^{0}\) and \({E}_{{{{{{{{\rm{W}}}}}}}}}^{0}\) while forming conduction and valence band offsets ΔEc, ΔEv around the junction. Spatially separated electrons and holes across the interface form charge-transfer (CT) excitons with the corresponding continuum energy E\({}_{{{{{{{{\rm{CT}}}}}}}}}^{0}={E}_{{{{{{{{\rm{Mo}}}}}}}}}^{0}-{{\Delta }}{E}_{{\rm {v}}}\). c, d Bound CT excitons XCT (red flat line) appear below the energy of intralayer MoSe2 exciton XMo (orange line) for either large band offsets ΔEv (interface engineering) or large dielectric constants ε (dielectric engineering).
