Fig. 3: Comparison of interlayer spacing-modulation and thickness-modulation.
a Kerr loops for individual FGT (26.9 nm) and FPSe (17.2 nm, 21.6 nm)/FGT (26.9 nm) heterostructures, respectively, measured at 5 K. b Kerr loops for individual FPSe (27.0 nm)/FGT (18.0 nm, 25.5 nm, and 22.4 nm) heterostructures, respectively, measured at 5 K. c The temperature-dependent Kerr loops of FPSe/FGT heterostructures are measured under 0 Gpa, ~8 Gpa, ~11 Gpa, and ~13 Gpa at 5 K, respectively. d The evolution of HEB on tFGT and tFPSe. e The evolution of HEB on temperature and pressure before and after LS. f, g The evolution of HEB and Tb on pressure and tAFM/tFM. Error bars represent standard deviation for several consecutive measurements. h Schematic diagram of spin valve device. i Tunneling resistance of the pristine device (I), thickness modulation device (II), and LS modulation device (III) with B applied parallel to the FGT c-axis. Device structure diagrams are shown in the upper part. Thickness modulation is achieved by constructing a new heterojunction. pristine device and thickness modulation device have different top FGT and FPSe thicknesses. LS modulation reduces the interlayer spacing of pristine device by applying pressure in situ.
