Fig. 5: Nonvolatile memory applications of GaSe FeFET devices.
From: Emergence of ferroelectricity in a nonferroelectric monolayer
a, b Schematic illustration and optical microscopy image of the devices, respectively. c The KPFM image of the GaSe FeFET device. d The transfer characteristic curve IDS–VGS of GaSe nanoflake at different VDS (5, 10 V). e The hysteresis loop of the output curves IDS–VDS at different sweeping maximal VDS. f The hysteresis output curves IDS–VDS exhibits a gate-tunable effect by applying gate voltage from 80 V to −80 V. g The switchable diode effect is regulated after pulse gate voltage bias poling (±80 V). h, i The resistance switching of the GaSe FeFET memristor by applying periodic pulse channel bias or gate voltage.
