Fig. 1: Microstructure of the AlN/Al2O3 heterointerface. | Nature Communications

Fig. 1: Microstructure of the AlN/Al2O3 heterointerface.

From: Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface

Fig. 1

a,b Cross-sectional TEM image (a) and corresponding SAED pattern (b) along the [\(11\bar{2}0\)]AlN//[\(10\bar{1}0\)]Al2O3 zone axis. The AlN film is epitaxially grown on the Al2O3 substrate. Bright and dark contrast regions (i.e., labeled I and II, respectively) appear alternately at the interface, indicating the existence of stress concentration. The interface is indicated by yellow arrows. c, d Plan-view TEM image (c) and corresponding SAED pattern (d) along the [0001] zone axis. Misfit dislocation networks are formed at the interface. The interfacial misfit dislocations are along three equivalent Al2O3 [\(10\bar{1}0\)], [\(1\bar{1}00\)], and [\(0\bar{1}10\)] directions. Scale bar, 200 nm.

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