Table 1 The comparison between our NiO based ZFS devices and previous AFM metals based ZFS devices

Structure of devices

Antiferromagnetic insulator NiO-based device

Other AFM metallic structures^10,11,19,20

ZERO-FIELD SWITCHING mechanism

Spin polarication with out-of-plane component

a) Exchange bias^10,11

b) Competing spin current¹²

c) Spin polarization with out-of-plane component^{16,17,18,19,20}

Critical switching current

3 ~ 6 × 10¹¹ A m⁻²

a) 8 ~ 9 × 10¹¹ A m^{−2 10}

b) 3 × 10¹¹ A m^{−2 12}

c) 6 × 10¹¹A m^{-2 20}

Néel temperature

520 K²²

345 K (Mn₃GaN)¹⁹, 475 K (Mn₃SnN)²⁰

Shunting

No

Yes

Néel vector regulation

Yes

Yes

z-direction spin-polarization regulation

Yes (Lattice strain)

No