Fig. 2: Experimental characterization of the silicon-based quantum emitter and cavity.
From: All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
a Photoluminescence (PL) raster scan of a device with a single emitter in the cavity at a temperature of 4K. The boundary of the finite photonic crystal (PhC) is indicated by the dashed white line and the suspended PhC is surrounded by the silicon-on-insulator (SOI) wafer. The photoluminescence signal shows bright emission from a color-center within the boundaries of the cavity. b The photoluminescence of the photonic device exhibits a sharp peak at ~1275 nm and a blue-shifted broader peak at ~1272 nm, corresponding to the zero-phonon line of the color-center and the cavity resonance, respectively. c Reflectivity of the photonic crystal cavity obtained by resonant scattering measurements. The cavity is illuminated with a linearly polarized white light source (white arrow) at 45° with respect to the cavity axis that is along the X-direction. The polarized signal perpendicular to the excitation is collected (red arrow) to probe the cavity mode. d The polarization diagram of the cavity mode detuned from the ZPL is shown in orange. The polarization diagram of a quantum emitter alone is shown in black. The polarizations agree well with a dipolar model (solid lines) and are well aligned (see Supplementary Note 1).
