Fig. 2: I − V hysteresis of CrOCl tunneling devices.

a Illustration of the tunneling device. b I − V curves of device 1 at 20 K (above the Néel temperature) and 2 K (below the Néel temperature). c 2D map of current polarization ρ as a function of temperature and bias voltage. The green dashed line marks the Néel temperature of the exfoliated CrOCl. d ρ versus temperature at different voltages extracted from b. e Resistance versus temperature of the CrOCl tunneling device at 5 V in different sweeping processes. f Tunneling resistance versus out-of-plane magnetic field at − 5 V in different sweeping processes. g Reproducible manipulation of the resistance states at − 0.8 V by alternately changing the sweeping direction. Data in a–f were obtained in device 1 ( ~ 9.1 nm CrOCl), while g was obtained in device 2 (monolayer CrOCl) in parallel with a 10 MΩ protection resistor.