Table 1 Summary of the reported basic performance of the artificial visual nerve/photoreceptors and our device
From: Vertically integrated spiking cone photoreceptor arrays for color perception
Artificial visual nerve/photoreceptor | Spike encoding | Spike rate | Power consumption per spike | Light response range | Vision-related functions |
---|---|---|---|---|---|
h-BN/Wse2 photoresistor and Wse2 transistor20 | × | - | - | 405–655 nm | Colored and color-mixed pattern recognition |
PTCDI-C8/VOPc light-sensitive element and P(VDF-TrFE)/ P(VP-EDMAEMAES) gated P(IID-BT) transistor47 | × | - | - | 550–850 nm | light intensity and frequency transduction |
ITO/MoOX/Pd/SiO2/Si48 | × | - | - | 365 nm | Image memorization and preprocessing |
PEA2MA2Pb3I10-based photoresistor & ITO transistor18 | × | - | - | Solar light | Visual-haptic fusion |
Ta/InGaZnO4/Pt and Pt/NbOx/Ta10 | √ | ~1.4-5 ×106 spike/s | ~1 mW @365 nm ~ 2 mW @254 nm | 254–365 nm | UV image segmentation |
Commercial photoresistor and Ag/TaOX/ITO49 | √ | 1-200 spike/s | 0.5 μW @532 nm | 532 nm | Visual depth perception |
p-i-n perovskite optoelectronic device50 | × | - | - | 435–700 nm | Excitatory and inhibitory light-mediated synaptic functions |
MoS2 transistor51 | × | - | - | 660 nm | Visual adaptation |
Ti/Au/GaOX/SiO2/Si and TiN/TaOX/HfOX/TiN52 | × | - | - | 254 nm | Latent fingerprint identification |
ITO/IGZO/Ag/Ta2O5/ITO (This work*) | √ | 0.1–1200 spike/s | 210 nW @360 nm 400 pW @405 nm 4.1 pW @532 nm | 360–532 nm | Color perception |
√ | ~1–1000 spike/s | 250 pW @Dark 50 pW @Bright | 400–780 nm | Visual perception |