Fig. 6: Summary of the SOC model fitting of all the devices we measured.
From: Determining spin-orbit coupling in graphene by quasiparticle interference imaging
a, b Histograms of λvZ and λR extracted from 19 QPI patterns measured on the devices with twist angles from 1° to 24° based on the SOC model. c, d Proximity induced λvZ and λR SOC terms in SLG as a function of twist angles. Each symbol corresponds to the average value obtained for a given twist angle, with error bars reflecting the SOC range in the fitting. e STM Topography of a 30° twist angle heterostructure (scale bar, 20 nm) showing several defects. f FFT of a dI/dV (V = 50 mV) map acquired in the same area as (e) (scale bar, 0.5 nm−1). In the presence of intravalley backscattering, one would expect a ring at the position indicated by the yellow dashed arc. None of the four \(dI/dV(V,\overrightarrow{r})\) maps acquired on the 30° device show the presence of intravalley backscattering.
