Fig. 1: The transition from ambipolarity to unipolarity behavior of the Schottky junction field-effect transistor (SJFET). | Nature Communications

Fig. 1: The transition from ambipolarity to unipolarity behavior of the Schottky junction field-effect transistor (SJFET).

From: Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Fig. 1

a Schematic of global gated SJFET with symmetric drain (D) and source (S) contacts. b Schematic of ambipolar transport behavior and corresponding band structure diagram. Both n- and p-branch on-state currents are attributed to the tunneling current due to the barrier reduction and thinning. TE represents thermionic emission. DT represents directing tunneling. c Offset contact geometry enabling p-type and n-type transport behavior and the corresponding band structure diagram. d Suppression of leakage currents by utilizing WTe2 bottom contacts. The red and blue circles represent the hole and electron, respectively. The arrows represent the carrier injection. Vg and Vds are the gate voltage and drain–source voltage, respectively. Ids is the drain–source current. Vt is the threshold voltage.

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