Fig. 2: Growth and characterization of WTe2 bottom electrode. | Nature Communications

Fig. 2: Growth and characterization of WTe2 bottom electrode.

From: Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Fig. 2

a Optical image of the epitaxially grown WTe2. Scale bar: 20 μm. b–d Raman intensity mapping images with the characteristic peaks corresponding to A17, A19 modes of WTe2, and Bg, Ag mode of MoTe2. Scale bar: 20 μm. e Morphology of epitaxially-grown WTe2 measured by AFM. Scale bar: 4 μm. f Potential image of epitaxially-grown WTe2 measured by Kelvin probe force microscopy. Scale bar: 4 μm. g Potential image of Au and CVD-grown WTe2. Scale bar: 2 μm. h I–V curves of W(Mo)Te2 with various thicknesses measured by the 2-terminal method. i I–V curves of W(Mo)Te2 with various thicknesses measured by the 4-terminal method. j 2-terminal resistance (R2T) and 4-terminal resistance (R4T) of W(Mo)Te2 with different thicknesses. The standard deviations were used as error bars. The inset shows the contact resistance 2Rcontact = R2T–R4T versus the thicknesses of W(Mo)Te2.

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