Fig. 4: Reconfigurable WSe2 SJFET with asymmetric MGr/WTe2 contacts. | Nature Communications

Fig. 4: Reconfigurable WSe2 SJFET with asymmetric MGr/WTe2 contacts.

From: Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Fig. 4

a Schematic of asymmetrically contacted WSe2 SJFET. b Pseudo-color transfer plots of the device at Vds > 0 showed the n-type polarity. c Pseudo-color transfer plots of the device at Vds < 0 showed the p-type polarity. The red dash lines indicated the threshold voltage Vt. d Vds-dependent effective field-effect mobility and the Ids on/off ratios. All field-effect mobilities were extracted from the linear regimes. e, f Barrier heights of the device at Vds = 1 V and Vds = −1 V. The Schottky barrier height is extracted under a flat-band gate voltage (VFB) condition, which was responsible for the start of deviations from the linear behavior. g Output characteristics of the device at varied gate voltages. h Gate-dependent rectifying ratios of the device. The gray-green dashed line represents the mean value of the ideality factors. i Comparison of ideality factor n and off-state current of MoS27,21,41,42,43,44,45 and WSe214,46,47,48,49,50 SJFET in previous reports.

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