Fig. 5: The photovoltaic performance of asymmetric contacted SJFET.
a, b Gate-dependent output curves of the device under illumination (635 nm). Dashed lines were measured in the dark. c Gate modulation of the responsivity (Rsc) at Vds = 0 V and open-circuit voltage Voc, respectively. d, e Output electrical powers at Vg > 0 and Vg < 0 as a function of drain-source voltage, respectively. Pin is the incident-light intensity. The dashed line indicates the increasing trend of Voc with Pin. f Output electrical power at Vg > 0 and Vg < 0 as a function of incident-light density. The inset shows Voc vs incident power density. the incident power density. ηPV is the power conversion efficiency. The standard deviations were used as error bars. g, h Fill factor (FF) at Vg > 0 and Vg < 0 as a function of the incident power density. The FF increased with the increasing amplitude of Vg. i Logic inverter based on the gate switchable photovoltaic performance. The white light power intensity was ranged from 0.1 mW/cm2 to 30 mW/cm2.
