Fig. 4: Dielectric screening and mobility enhancement effects of CVD-grown Bi2SiO5 nanoflakes as the high-κ substrates. | Nature Communications

Fig. 4: Dielectric screening and mobility enhancement effects of CVD-grown Bi2SiO5 nanoflakes as the high-κ substrates.

From: Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Fig. 4

a Schematic illustration and OM image of back-gate MoS2 four-probe FETs device. b Linear output curves (Ids–Vds) of MoS2 FETs on Bi2SiO5 (left) and on SiO2 substrate (right) measured at 300 K. c The 4-probe transfer curves of MoS2 FETs measured at different temperatures (5~300 K) on Bi2SiO5 (left) and SiO2 (right) substrates, respectively. d The extracted temperature-dependent 4-probe FET mobility (μFET,4-probe) of MoS2 on Bi2SiO5 (red) and SiO2 (blue) substrates.

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