Fig. 1: Excitons in different stacking structures of the trilayer device.
From: Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice
a Schematics of the device structure with three different regions: (I) WS2/b-WSe2 (II) t-WSe2/WS2/b-WSe2 (III) top bilayer, t-WSe2/WS2. b Schematics of the dipolar and quadrupolar excitons configuration. c Type-II alignment of the angle-aligned WSe2/WS2 heterobilayer. d Valence band hybridization in the trilayer region, compared with the flat valence band of WSe2 in the WSe2/WS2 moiré bilayer regions. e–g are doping-dependent PL spectra for regions I, II, and III. The PL data were taken from device D5.
