Fig. 4: Chemical effect of the foreign ions on the disordering of γ-Ga2O3 lattice. | Nature Communications

Fig. 4: Chemical effect of the foreign ions on the disordering of γ-Ga2O3 lattice.

From: Universal radiation tolerant semiconductor

Fig. 4

a AIMD-PRDFs of O-O and heavy-ion (Ga/Ni/Au) pairs at 900 K and 0 bar in the initial γ (black), γ + Ni (green), γ + Au (orange) and γ + Ga (purple). The first valleys are at 3.6 and 4.0 Å, as labelled by the vertical dashed lines. b Ratios of the absolute areas (covered by the PRDF curves with reference to 1): the distorted cells against the initial γ cell. c Bond angle distribution of O sublattice with O-O bond cutoff at 3.6 Å. d The Pr values of the distorted bond-angle distribution to the one of the initial γ cell. See Supplementary Note 8, Supplementary Figs. 14–15 for more details. The link to the raw data is provided in the Data Availability Statement.

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