Table 1 Implantation parameters used in the present study

From: Universal radiation tolerant semiconductor

Ion

Energy (keV)

Fluence

Rpd (nm)

Rp (nm)

Max conc.(at.%)

(ions/cm2)

1 dpa (ions/cm2)

(dpa)

58Ni+

400

2 × 1013–1 × 1017

3.8 × 1014

0.05–265

115

160

0.001–5.8

197Au+

1200

3 × 1015, 1 × 1016

1.2 × 1014

26, 86

110

160

0.3, 0.9

69Ga+

500

1 × 1016, 3 × 1016

3.5 × 1014

29, 88

125

190

0.6, 1.9

20Ne+

140

3.5 × 1016

1.3 × 1015

26

118

170

2.2

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