Fig. 2: Electronic structure of EuGa4 in the PM phase.
a Three groups of FS pockets: α, β, and γ, based on DFT calculations. The cross-sectional cut of the β pocket at the kz = 0 plane is illustrated with dashed red lines. b ARPES measured FS with hν = 118 eV and T = 25 K. Two high-symmetry k − paths (yellow lines) are indicated for band dispersion analysis. The white lines mark the BZ boundary. The dashed red lines are the kz = 0 cross sections of the β pocket, the same as those shown in a. The dashed yellow lines delineate the boundary within which the effect of kz-broadening is observed, as discussed in the text. c ARPES band dispersion along path 1 with hν = 120 eV. The solid lines are band structures from DFT calculations. Red and orange indicate the bands that form the NR1 and NR2, respectively, while the gray bands are irrelevant ones. Same applies to e. d Zoom-in view of the boxed region in c, with the MDC stacks shown on the right. e, ARPES band dispersion along the Z−Y path. The colorbar in c is shared for d and e as well.
