Table 1 Comparison of key parameters with previously reported optoelectronic memories
From: Non-volatile optoelectronic memory based on a photosensitive dielectric
Working principle | Photosensitive material | Programming voltage | OPD [mW/cm2] | Programming time | Memory window | Tested retention time | Tested fatigue cycles | Ref. |
|---|---|---|---|---|---|---|---|---|
Photochromic | DAEs | 60 V | – | 5 s | >105 | 500 days | 70 | |
Tunneling | MoS2 | 100 V | 5 × 104 | 1 s | >107 | 104 s | 70 | |
Tunneling | SnS2 | 40 V | – | 5 s | >104 | – | – | |
Tunneling | PtS2 | 30 V | 41 | 100 ms | >103 | – | – | |
Defects | BTBT | 120 V | 40 | 12 s | >106 | 2 × 104 s | – | |
Defects | MoS2/PbS | 40 V | 0.027 | 5 s | <3 | 104 s | 2000 | |
Defects | WSe2 | 80 V | 210 | 5 s | 106 | 4.5 × 104 s | 200 | |
Defects | Penance | 60 V | 71.59 | 120 s | 104 | 100 days | 3 | |
Defects | PDVT-10:N2200 | 40 V | 5 | 1 s | 105 | 2 × 104 s | 500 | |
Defects | MoS2 | 80 V | 501 | 10 s | 107 | 104 s | 250 | |
Defects | TiO2 | 50 V | 1 | 30 s | <2 | 104 s | – | |
PSD | Ga2O3 | 4 V | 0.16 | 1 s | >106 | 2.6 × 105 s | 500 | This work |
