Table 1 Parameters for the DT experiments

From: Digital twin based monitoring and control for DC-DC converters

Parameter name

Value

Description

DC input voltage (Vin)

100 V → 90 V → 80 V

 

IGBT switching frequency

10 kHz

For simulation and experimental verification in Cases I to III

SiC MOSFET switching frequency

100 kHz

For simulation and experimental verification in Case IV

Inductor (L)

2 mH

 

Filter capacitance (C)

3300 μF

 

Load resistance (R)

20 Ω

 

Voltage reference

48 V

The rated voltage for low voltage dc microgrids

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