Fig. 2: The characteristics of the n-type photoresistor.
From: A single n-type semiconducting polymer-based photo-electrochemical transistor
a Schematic of the interdigitated electrode (IDE), not to scale. The p(C6NDI-T) film was coated on the IDE (W = 12.8 cm, L = 5 \(\mu m\), d = 80 nm) and immersed in PBS. W, L, and d represent width, length, and thickness, respectively. The voltage difference, VIDE, was applied between the two contacts (A and B). b The response of the IDE current (IIDE) to illumination with four independent LEDs with an intensity of 150 mW/cm2 switched on at t = 0 min. VIDE = 0.4 V. LEDs were removed when saturation was reached. c Quasi-output curve of the IDE where IIDE was measured at various VIDE and during exposure to different light intensities (from 0 to 406 mW/cm2). d The real-time changes in IIDE (middle) and the electrochemical potential of the two IDE contacts (bottom) to various light intensities (top). The light intensity application sequence is as follows: dark, 0.3 mW/cm2 (22 min), 4.2 mW/cm2 (28 min), 46 mW/cm2 (31 min), 406 mW/cm2 (35 min), and dark (40 min).
