Fig. 2: Tip-enhanced spectroscopy of the MoSe2-WSe2 interface.
From: Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction
a Left panel: Schematic of the lateral heterojonction, TEPL measurement and the resulting excitonic diffusion properties. Right panel: Diagram of the different excitonic processes observed in our system. b (d) Typical TEPL spectra taken across the interface in e-LH (respectively un-LH) (1) 500 nm to the left of the interface, (2) 100 nm (300 nm) and (3) 1,25 μm to the right of the interface. The excitonic contributions are fitted using individual Lorentzian function, neutral WSe2 exciton in red (A\({}_{1s}^{{{{{{\rm{WS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\)), neutral MoSe2 exciton in blue (A\({}_{1s}^{{{{{{\rm{MoS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\)) and the dark exciton (out-of-plan) in green (X\({}_{D}^{{{{{{\rm{WS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\)). c (e) Top: Energy and FWHM of each Lorentzian peak obtained from the fitting procedure as shown in (b). d. Bottom: Amplitude of each Lorentzian peak obtained from the fitting procedure as shown in (b). d The red and blue stars indicate A\({}_{1s}^{{{{{{\rm{WS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\) and A\({}_{1s}^{{{{{{\rm{MoS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\), respectively.
