Fig. 3: Exciton distribution and near field optical spectrocopy of the junction.
From: Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction
a Illustration of the exciton drift inside the interface, the shaded area corresponds to the partition zone between the two materials. b Exciton density n(x, xtip) calculated with the near-field model for two tip positions xtip = LD (black line) and xtip = − LD (green line) with: \({\Gamma }_{{0}_{1}}=3{\Gamma }_{{0}_{2}}={\Gamma }_{0}\), τ1 = τ2 = τ, L1 = L2 = LD = 0.1 μm. The dashed lines indicate the exciton density with no junction influence (F = 0). c Normalized PL intensity of A\({}_{1s}^{{{{{{\rm{MoS}}}}}}{{{{{{\rm{e}}}}}}}_{2}}\) (blue) and A\({}_{1s}^{WS{e}_{2}}\) (red) in e-LH area. d Same as (c) in the un-LH area. The solid black line represents the PL intensities calculated using Eqs. (5) and (6).
