Fig. 2: Illustrations of stacked nanoribbon transistors with the same physical height.
From: Process integration and future outlook of 2D transistors
a Cross-section image of a stacked gate-all-around (GAA) Si compared to stacked GAA 2D TMD nanoribbon (NR) transistors with the same physical height. Assuming the same volume for gate oxide and gate metal deposition, four stacked Si NR would have the same height as six stacked 2D TMD NR. Therefore, 2D TMD drive currents need only be 2/3 of Si drive currents to be competitive. Panel b represents the same drawing but at the scale of individual atoms for the 2D TMD films. Metal contacts are represented in grey, the spacer dielectric is represented in yellow and the gate oxide is represented in pink. The gate metal is not represented. © IEEE (2023). Figure 2a reprinted with minor modifications, with permission, from K. P. O’Brien et al., “Advancing 2D monolayer CMOS through contact, channel and interface engineering,” 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 7.1.1–7.1.4, https://doi.org/10.1109/IEDM19574.2021.9720651.
