Fig. 1: Electrical characteristics of the dynamic memristor.
From: Generative complex networks within a dynamic memristor with intrinsic variability
a Schematic diagram of the structure of the device. b Optical microscopy image of a 4 × 4 μm2 device. c Cross-sectional TEM image of the dynamic memristor, consisting of a vertically stacked structure of Pd/HfO2/Ta2O5/Ta (50 nm/10 nm/5 nm/20 nm). d The corresponding elements distribution profile from EDS. e Evolution of the current (cyan curve) through the device under read voltage of (3 V) after the stimulating voltage pulse (5 V and 1 ms) has ceased. Inset: zoom-in view of current evolution over a short time interval before, during and after the stimulating pulse is applied. The current drops from the peak I- to I+ immediately after the voltage has decreased from 5 V to 3 V. f Spontaneous decay of the current under read voltage from I+ to a baseline steady-state value after the stimulating pulse has ceased. The decay time τ varies broadly between 342 ms (τmin) and 1089 ms (τmax) over 1000 measurements. g Statistical analysis of the correlation between I+ and I- over 10 sets of multi-pulse (1 ~ 10) measurements, each containing 1000 independent measurements. h Statistical analysis of the correlation between τ and I- over 10 sets of multi-pulse (1 ~ 10) measurements, each containing 1000 independent measurements.
