Fig. 4: Electrical and dielectric properties of graphene and hBN monolayers. | Nature Communications

Fig. 4: Electrical and dielectric properties of graphene and hBN monolayers.

From: Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates

Fig. 4

a Typical optical image of the FET devices. b Plot of the conductivity of graphene as a function of gate voltage. The orange and violet curves correspond to the highest mobility of as grown graphene (~10,400 cm2/Vs) and transferred graphene (~7640 cm2/Vs), respectively. c Carrier mobility of as-grown graphene and transferred graphene on SiO2/Si substrates. d Schematic diagram of the hBN samples and the electrical connections for the conduction atomic force microscopy. e Current-voltage characteristics of transferred hBN samples grown on Cu and Al2O3 substrates. f Distribution of calculated dielectric constant of the hBN samples with scanning capacitance microscopy. The violet solid line is the Gauss fitted curve.

Back to article page