Fig. 4: Top and side views of 14 new direct narrow-gap semiconductors.
For each material, the values of bandgap at Perdew-Burke-Ernzerhof (PBE) level (\({E}_{g}^{{PBE}}\)) and energy above hull (\({E}_{{hull}}\)) are provided.
Fig. 4: Top and side views of 14 new direct narrow-gap semiconductors. | Nature Communications
