Fig. 4: Topological corner state comparison between theory and experiment in Ni3(HITP)2. | Nature Communications

Fig. 4: Topological corner state comparison between theory and experiment in Ni3(HITP)2.

From: Identifying topological corner states in two-dimensional metal-organic frameworks

Fig. 4

a STM topographic image of Ni3(HITP)2 triangular framework on Au(111) substrate (−0.3 V and 0.1 nA), which is overlapped with its atomic structures. b DFT bands of Ni3(HITP)2. The open circles are fitted Type-I Wannier-bands. The inset is fitted six Wannier orbital centers (red circles) in the unit cell. c Zoomed-in bands of b around the Fermi-Level. d, e Theoretical LDOS and experimental dI/dV spectra of the bulk, edge and corner states in Ni3(HITP)2 triangular framework. c, d, e are aligned by setting Fermi-level and zero bias voltage together. The shadow color region denotes the bulk band gap. f, g dI/dV maps at 0.23 V and 0.35 V, marked by two dotted lines in e showing the spatial distribution of experimental corner and edge states. The dashed yellow circle highlights the corner region. h, i LDOS maps at 0.23 eV and 0.35 eV, marked by two dotted lines in d showing the spatial distribution of theoretical corner and edge states. j, k are the same as f, g which are overlapped with the triangular cluster made of Wannier orbital centers (yellow circles). l, m dI/dV profiles for edge and corner states at 0.23 V and 0.35 V, which are along line-1 and line-2 in j, k.

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