Fig. 2: Position-dependent characterization of superconducting magnetoresistance in NbSe₂(5 ML)/CrSBr (Device 1).

a Schematic image of our NbSe₂/CrSBr device. Numbers indicate electrode positions. The edge of the CrSBr flake is placed between electrodes 4 and 5. b, c Side (b) and top (c) view of the simulated map for the stray field’s out-of-plane component. When an external magnetic field H is applied along the b-axis, an out-of-plane stray field is generated at the edge of the CrSBr flake. The scale bar indicates 20 nm. d–f Temperature-dependent resistance measured at different positions in H_b = 0, 6, and 8 kOe. There is a negligible change upon applied magnetic fields in a pristine NbSe₂. Superconductivity switching in the NbSe₂ occurs at the edge of the CrSBr flake, whereas a non-zero resistance state is recorded for the NbSe₂ under the CrSBr flake. g–i Magnetic field dependence of the resistance measured at different positions. Sharp superconducting magnetoresistance is observed at the edge of the CrSBr flake due to the stray out-of-plane field, and the effect decays as the measured position moves away from the CrSBr edge.