Fig. 4: Photodetection behavior of type-I GaSb/GeS core–shell heterostructure NWs.
From: Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires
a Wavelength-dependent broad-spectrum photodetection performances at 1 V bias. The laser intensities from 405 nm to 785 nm and from 850 nm to 1550 nm are 0.05 mW mm−2 and 6.00 mW mm−2, respectively. b–d I-t curves of as-fabricated photodetector operated under the illuminations of 405, 785, and 1310 nm lasers with different intensities, respectively. e Visible light-assisted infrared photodetection performance. f The temporal photoresponse characteristics of 1550 nm laser (5.00 mW mm−2) with and without the assist of 405 nm laser. g Schematic for type-I GaSb/GeS core–shell heterostructure NWs photodetectors.
